Variation of Fundamental Constants V.V. Flambaum School of Physics, UNSW, Sydney

Variation of Fundamental Constants V.V. Flambaum School of Physics, UNSW, Sydney www.phwiki.com

Variation of Fundamental Constants V.V. Flambaum School of Physics, UNSW, Sydney

Nemerson, Andrea, Freelance Columnist has reference to this Academic Journal, PHwiki organized this Journal Variation of Fundamental Constants V.V. Flambaum School of Physics, UNSW, Sydney, Australia Co-authors: Atomic calculations V.Dzuba, M.Kozlov, E.Angstmann, J.Berengut,M.Marchenko,Cheng Chin,S.Karshenboim,A.Nevsky, S.Porsev Nuclear in addition to QCD calculations E.Shuryak, V.Dmitriev, D.Leinweber, A.Thomas, R.Young, A.Hoell, P.Jaikumar, C.Roberts,S.Wright, A.Tedesco, W.Wiringa Cosmology J.Barrow Quasar data J.Webb,M.Murphy,M.Drinkwater,W.Walsh,P.Tsanavaris, C.Churchill,J.Prochazka,A.Wolfe,S.Muller,C,Henkel, F.Combes, T.Wiklind, thanks to W.Sargent,R.Simcoe Laboratory measurements S.J. Ferrel,,A,Cingoz,ALappiere,A.-T.Nguyen,N.Leefer, D.Budker,S.K.Lamoreuax,J.R.Torgerson,S.Blatt,A.D.Ludlow,G.K.Cambell, J.W.Thomsen,T.Zelevinsky,M.M.Boid,J.Ye,X.Baillard,M.Fouche,R.LeTargat,A.Brush,P.Lemonde,M.Takamoto,F.-L.Hong,H.Katori Motivation Extra space dimensions (Kaluza-Klein, Superstring in addition to M-theories). Extra space dimensions is a common feature of theories unifying gravity with other interactions. Any change in size of these dimensions would manifest itself in the 3D world as variation of fundamental constants. Scalar fields . Fundamental constants depend on scalar fields which vary in space in addition to time (variable vacuum dielectric constant e0 ). May be related to “dark energy” in addition to accelerated expansion of the Universe “ Fine tuning” of fundamental constants is needed as long as humans to exist. Example: low-energy resonance in production of carbon from helium in stars (He+He+He=C). Slightly different coupling constants — no resonance –- no life. Variation of coupling constants in space provide natural explanation of the “fine tuning”: we appeared in area of the Universe where values of fundamental constants are suitable as long as our existence. Search as long as variation of fundamental constants Big Bang Nucleosynthesis Quasar Absorption Spectra 1 Oklo natural nuclear reactor Atomic clocks 1 Enhanced effects in atoms 1, molecules1 in addition to nuclei Dependence on gravity evidence 1 Based on atomic in addition to molecular calculations evidences

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Dimensionless Constants Since variation of dimensional constants cannot be distinguished from variation of units, it only makes sense to consider variation of dimensionless constants. Fine structure constant a=e2/hc=1/137.036 Electron or quark mass/QCD strong interaction scale, me,q/LQCD a strong (r)=const/ln(r LQCD /ch) me,q are proportional to Higgs vacuum (weak scale) Variation of strong interaction Gr in addition to unification (Calmet, Fritzsch; Langecker, Segre, Strasser; Wetterich, Dent) Relation between variations of different coupling constants Gr in addition to unification models Calmet,Fritzch; Langecker, Segre, Strasser; Wetterich,Dent

a 3 -1(m)=a strong -1 (m)=b3ln(m /LQCD ) a -1(m)=5/3 a 1 -1(m) + a 2 -1(m) Dependence on quark mass Dimensionless parameter is mq/LQCD . It is convenient to assume LQCD =const, i.e. measure mq in units of LQCD mp is proportional to (mqLQCD)1/2 Dmp/mp=0.5Dmq/mq Other meson in addition to nucleon masses remains finite as long as mq=0. Dm/m=K Dmq/mq Argonne: K are calculated as long as p,n,r,w,s. Nuclear magnetic moments depends on p-meson mass mp p n p p n p Nucleon magnetic moment Spin-spin interaction between valence in addition to core nucleons

Nucleon magnetic moment Nucleon in addition to meson masses QCD calculations: lattice, chiral perturbation theory,cloudy bag model, Dyson-Schwinger in addition to Faddeev equations, semiempirical. Nuclear calculations: meson exchange theory of strong interaction. Nucleon mass in kinetic energy p2/2M Big Bang nucleosynthesis: dependence on quark mass Flambaum, Shuryak 2002 Flambaum, Shuryak 2003 Dmitriev, Flambaum 2003 Dmitriev, Flambaum, Webb 2004 Coc, Nunes, Olive, Uzan,Vangioni 2007 Dent, Stern, Wetterich 2007 Flambaum, Wiringa 2007 Berengut, Dmitriev, Flambaum 2009

Deuterium bottleneck At temeperature T<0.3 Mev all abundances follow deuteron abundance (no other nuclei produced if there are no deuterons) Reaction g d – n p , exponentially small number of energetic photons, e-( Ed/T) Exponetilal sensitivity to deuteron binding energy Ed , Ed=2 Mev , Freezeout temeperure Tf =30 KeV New BBN result Dent,Stern,Wetterich 2007; Berengut, Dmitriev, Flambaum 2009: dependence of BBN on energies of 2,3H,3,4He,6,7Li ,7,8Be Flambaum,Wiringa 2007 : dependence of binding energies of 2,3H,3,4He,6,7Li, 7,8Be on nucleon in addition to meson masses, Flambaum,Holl,Jaikumar,Roberts,Write, Maris 2006: dependence of nucleon in addition to meson masses on light quark mass mq. Big Bang Nucleosynthesis: Dependence on mq/ LQCD 2H 1+7.7x=1.07(15) x=0.009(19) 4He 1-0.95x=1.005(36) x=-0.005(38) 7Li 1-50x=0.33(11) x=0.013(02) Final result x=DXq/Xq =0.013 (02), Xq=mq/ LQCD Big Bang Nucleosynthesis: Dependence on mq/ LQCD 2H 1+7.7x=1.07(15) x=0.009(19) 4He 1-0.95x=1.005(36) x=-0.005(38) 7Li 1-50x=0.33(11) x=0.013(02) result x=DXq/Xq =0.013 (02), Xq=mq/ LQCD Dominated by 7Li abundance (3 times difference), consistent with 2H,4He Nonlinear effects: x=DXq/Xq =0.016 (05) Alkali Doublet Method (Bahcall,Sargent;Varshalovich, Potekhin, Ivanchik, et al) Fine structure interval DFS = E(p3/2) - E(p1/2) = A(Za)2 If Dz is observed at red shift z in addition to D0 is FS measured on Earth then Ivanchik et al, 1999: Da/a = -3.3(6.5)(8) x 10-5. Murphy et al, 2001: Da/a = -0.5(1.3) x 10-5. Variation of fine structure constant a Nemerson, Andrea San Francisco Bay Guardian Freelance Columnist www.phwiki.com

Many Multiplet Method (Dzuba,Flambaum, Webb) p3/2 p3/2 s1/2 s1/2 p1/2 p1/2 dw >> dDFS ! Advantages: Order of magnitude gain in sensitivity Statistical: all lines are suitable as long as analysis Observe all unverse (up to z=4.2) Many opportunities to study systematic errors a1 a2 w w Quasar absorption spectra Earth Quasar Gas cloud Light a

Quasar absorption spectra Earth Quasar Gas cloud Light a One needs to know E(a2) as long as each line to do the fitting Use atomic calculations to find w(a). For a close to a0 w = w0 + q(a2/a02-1) q is found by varying a in computer codes: q = dw/dx = [w(0.1)-w(-0.1)]/0.2, x=a2/a02-1 a =e2/hc=0 corresponds to non-relativistic limit (infinite c). Use atomic calculations to find w(a). For a close to a0 w = w0 + q(a2/a02-1) q is found by varying a in computer codes: q = dw/dx = [w(0.1)-w(-0.1)]/0.2, x=a2/a02-1

EDMs of atoms of experimental interest dn = 5 x 10-24 e cm h, d(3He)/ dn = 10-5 Summary Atomic in addition to molecular experiments are used to test unification theories of elementary particles Parity violation Weak charge: test of the st in addition to ard model in addition to search of new physics Nuclear anapole, probe of weak PV nuclear as long as ces Time reversal EDM, test of physics beyond the st in addition to ard model. 1-3 orders improvement may be enough to reject or confirm all popular models of CP violation, e.g. supersymmetric models A new generation of experiments with enhanced effects is underway in atoms, diatomic molecules, in addition to solids Publications: V. A. Dzuba, V. V. Flambaum, J, K. Webb, PRL 82, 888 (1999). V. A. Dzuba, V. V. Flambaum, J, K. Webb, PRA 59, 230 (1999). V. A. Dzuba, V. V. Flambaum, PRA 61, 034502 (2000). V. A. Dzuba, V. V. Flambaum, M. T. Murphy, J, K. Webb, LNP 570, 564 (2001). J. K. Webb et al , PRL 87, 091301 (2001). V. A. Dzuba, V. V. Flambaum, M. T. Murphy, J, K. Webb, PRA 63, 042509 (2001). M. M. Murphy et al, MNRAS, 327, 1208 (2001). V. A. Dzuba et al, PRA, 66, 022501 (2002). V. A. Dzuba, V. V. Flambaum, M. V. Marchenko, PRA 68, 022506 (2003). E. J. Angstmann, V. A. Dzuba, V. V. Flambaum, PRA 70, 014102 (2004). J. C. Berengat et al, PRA 70, 064101 (2004). M. M. Murphy et al, LNP, 648, 131 (2004). V. A. Dzuba, PRA, 71, 032512 (2005). V. A. Dzuba, V. V. Flambaum, PRA, 71, 052509 (2005). V. A. Dzuba, V. V. Flambaum, PRA, 72, 052514 (2005). V. A. Dzuba, PRA, 71, 062501 (2005). S. G. Karshenboim et al, physics/0511180.

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EE 5340 Semiconductor Device Theory Lecture 6 – Fall 2010 Second Assignment Net intrinsic mobility Lattice mobility Net extrinsic mobility

EE 5340 Semiconductor Device Theory Lecture 6 - Fall 2010 Second Assignment Net intrinsic mobility Lattice mobility Net extrinsic mobility www.phwiki.com

EE 5340 Semiconductor Device Theory Lecture 6 – Fall 2010 Second Assignment Net intrinsic mobility Lattice mobility Net extrinsic mobility

Morgenson Burnap, Lara, Executive Editor has reference to this Academic Journal, PHwiki organized this Journal EE 5340 Semiconductor Device Theory Lecture 6 – Fall 2010 Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc L06 10Sep10 Second Assignment Please print in addition to bring to class a signed copy of the document appearing at http://www.uta.edu/ee/COE%20Ethics%20Statement%20Fall%2007.pdf L06 10Sep10 Net intrinsic mobility Considering only lattice scattering

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L06 10Sep10 Lattice mobility The mlattice is the lattice scattering mobility due to thermal vibrations Simple theory gives mlattice ~ T-3/2 Experimentally mn,lattice ~ T-n where n = 2.42 as long as electrons in addition to 2.2 as long as holes Consequently, the model equation is mlattice(T) = mlattice(300)(T/300)-n L06 10Sep10 Net extrinsic mobility Considering only lattice in addition to impurity scattering L06 10Sep10 Net silicon extr resistivity (cont.) Since r = (nqmn + pqmp)-1, in addition to mn > mp, (m = qt/m) we have rp > rn Note that since 1.6(high conc.) < rp/rn < 3(low conc.), so 1.6(high conc.) < mn/mp < 3(low conc.) L06 10Sep10 Ionized impurity mobility function The mimpur is the scattering mobility due to ionized impurities Simple theory gives mimpur ~ T3/2/Nimpur Consequently, the model equation is mimpur(T) = mimpur(300)(T/300)3/2 L06 10Sep10 Figure 1.17 (p. 32 in M&K1) Low-field mobility in silicon as a function of temperature as long as electrons (a), in addition to as long as holes (b). The solid lines represent the theoretical predictions as long as pure lattice scattering [5]. Figure 1.16 (p. 31 M&K) Electron in addition to hole mobilities in silicon at 300 K as functions of the total dopant concentration. The values plotted are the results of curve fitting measurements from several sources. The mobility curves can be generated using Equation 1.2.10 with the following values of the parameters [3] (see table on next slide). L06 10Sep10 L06 10Sep10 Exp. mobility model function as long as Si1 Parameter As P B mmin 52.2 68.5 44.9 mmax 1417 1414 470.5 Nref 9.68e16 9.20e16 2.23e17 a 0.680 0.711 0.719 L06 10Sep10 Carrier mobility functions (cont.) The parameter mmax models 1/tlattice the thermal collision rate The parameters mmin, Nref in addition to a model 1/timpur the impurity collision rate The function is approximately of the ideal theoretical as long as m: 1/mtotal = 1/mthermal + 1/mimpurity L06 10Sep10 Carrier mobility functions (ex.) Let Nd = 1.78E17/cm3 of phosphorous, so mmin = 68.5, mmax = 1414, Nref = 9.20e16 in addition to a = 0.711. Thus mn = 586 cm2/V-s Let Na = 5.62E17/cm3 of boron, so mmin = 44.9, mmax = 470.5, Nref = 9.68e16 in addition to a = 0.680. Thus mp = 189 cm2/V-s L06 10Sep10 Drift Current The drift current density (amp/cm2) is given by the point as long as m of Ohm Law J = (nqmn+pqmp)(Exi+ Eyj+ Ezk), so J = (sn + sp)E = sE, where s = nqmn+pqmp defines the conductivity The net current is L06 10Sep10 Drift current resistance Given: a semiconductor resistor with length, l, in addition to cross-section, A. What is the resistance As stated previously, the conductivity, s = nqmn + pqmp So the resistivity, r = 1/s = 1/(nqmn + pqmp) L06 10Sep10 Drift current resistance (cont.) Consequently, since R = rl/A R = (nqmn + pqmp)-1(l/A) For n >> p, (an n-type extrinsic s/c) R = l/(nqmnA) For p >> n, (a p-type extrinsic s/c) R = l/(pqmpA)

L06 10Sep10 Drift current resistance (cont.) Note: as long as an extrinsic semiconductor in addition to multiple scattering mechanisms, since R = l/(nqmnA) or l/(pqmpA), in addition to (mn or p total)-1 = S mi-1, then Rtotal = S Ri (series Rs) The individual scattering mechanisms are: Lattice, ionized impurity, etc. L06 10Sep10 Net silicon (ex- trinsic) resistivity Since r = s-1 = (nqmn + pqmp)-1 The net conductivity can be obtained by using the model equation as long as the mobilities as functions of doping concentrations. The model function gives agreement with the measured s(Nimpur) L06 10Sep10 Net silicon extr resistivity (cont.) Since r = (nqmn + pqmp)-1, in addition to mn > mp, (m = qt/m) we have rp > rn, as long as the same NI Note that since 1.6(high conc.) < rp/rn < 3(low conc.), so 1.6(high conc.) < mn/mp < 3(low conc.) Figure 1.15 (p. 29) M&K Dopant density versus resistivity at 23°C (296 K) as long as silicon doped with phosphorus in addition to with boron. The curves can be used with little error to represent conditions at 300 K. [W. R. Thurber, R. L. Mattis, in addition to Y. M. Liu, National Bureau of St in addition to ards Special Publication 400–64, 42 (May 1981).] L06 10Sep10 L 06 Sept 10 Net silicon (com- pensated) res. For an n-type (n >> p) compensated semiconductor, r = (nqmn)-1 But now n = N Nd – Na, in addition to the mobility must be considered to be determined by the total ionized impurity scattering Nd + Na NI Consequently, a good estimate is r = (nqmn)-1 = [Nqmn(NI)]-1 Figure 1.16 (p. 31 M&K) Electron in addition to hole mobilities in silicon at 300 K as functions of the total dopant concentration. The values plotted are the results of curve fitting measurements from several sources. The mobility curves can be generated using Equation 1.2.10 with the following values of the parameters [3] (see table on next slide). L 06 Sept 10

L 06 Sept 10 Approximate m func- tion as long as extrinsic, compensated n-Si1 Param. As P mmin 52.2 68.5 mmax 1417 1414 Nref 9.68e16 9.20e16 a 0.680 0.711 Nd > Na n-type no = Nd – Na = N s = no q mn NI = Nd + Na NAs > NP As param NP > NAs P param po = ni2/no L 06 Sept 10 Approximate m func-tion as long as extrinsic, compensated p-Si1 Parameter B mmin 44.9 mmax 470.5 Nref 2.23e17 a 0.719 Na > Nd p-type po = Na – Nd = N s = po q mp NI = Nd + Na Na = NB B par no = ni2/po L 06 Sept 10 Summary The concept of mobility introduced as a response function to the electric field in establishing a drift current Resistivity in addition to conductivity defined m(Nd,Na,T) model equation developed Resistivity models developed as long as extrinsic in addition to compensated materials

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L06 10Sep10 Equipartition theorem The thermodynamic energy per degree of freedom is kT/2 Consequently, L06 10Sep10 Carrier velocity saturation1 The mobility relationship v = mE is limited to “low” fields v < vth = (3kT/m)1/2 defines “low” v = moE[1+(E/Ec)b]-1/b, mo = v1/Ec as long as Si parameter electrons holes v1 (cm/s) 1.53E9 T-0.87 1.62E8 T-0.52 Ec (V/cm) 1.01 T1.55 1.24 T1.68 b 2.57E-2 T0.66 0.46 T0.17 L06 10Sep10 Carrier velocity2 carrier velocity vs E as long as Si, Ge, in addition to GaAs (after Sze2) L06 10Sep10 Carrier velocity saturation (cont.) At 300K, as long as electrons, mo = v1/Ec = 1.53E9(300)-0.87/1.01(300)1.55 = 1504 cm2/V-s, the low-field mobility The maximum velocity (300K) is vsat = moEc = v1 = 1.53E9 (300)-0.87 = 1.07E7 cm/s L06 10Sep10 Diffusion of Carriers (cont.) L06 10Sep10 Diffusion of carriers In a gradient of electrons or holes, p in addition to n are not zero Diffusion current,`J =`Jp +`Jn (note Dp in addition to Dn are diffusion coefficients) L06 10Sep10 References Fundamentals of Semiconductor Theory in addition to Device Physics, by Shyh Wang, Prentice Hall, 1989. in addition to 3Semiconductor Physics & Devices, by Donald A. Neamen, 2nd ed., Irwin, Chicago. M&K = Device Electronics as long as Integrated Circuits, 3rd ed., by Richard S. Muller, Theodore I. Kamins, in addition to Mansun Chan, John Wiley in addition to Sons, New York, 2003. L06 10Sep10 References M&K in addition to 1Device Electronics as long as Integrated Circuits, 2 ed., by Muller in addition to Kamins, Wiley, New York, 1986. See Semiconductor Device Fundamen-tals, by Pierret, Addison-Wesley, 1996, as long as another treatment of the m model. 2Physics of Semiconductor Devices, by S. M. Sze, Wiley, New York, 1981.

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A firm has competitive advantage over rival firms when it can do something bette

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A firm has competitive advantage over rival firms when it can do something bette

Perez, Gina, Editorial Assistant has reference to this Academic Journal, PHwiki organized this Journal A firm has competitive advantage over rival firms when it can do something better, faster, more economically, or uniquelyChapter 2: Gaining Competitive Advantage Through In as long as mation SystemsChapter 2 Learning ObjectivesEnabling Organizational Strategy Through In as long as mation Systems

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Organizational Decision-Making LevelsExecutive/Strategic LevelUpper ManagementManagerial/Tactical LevelMiddle ManagementOperational LevelOperational Employees, Foremen, SupervisorsOrganizational Decision-Making Levels: Operational LevelOrganizational Decision-Making Levels: Managerial/Tactical Level

Organizational Decision-Making Levels: Executive/Strategic LevelOrganizational Functions in addition to Functional LevelsIn as long as mation Systems as long as Automating: Doing Things Faster (Table 2.2)

In as long as mation Systems as long as Organizational Learning: Doing Things BetterIn as long as mation systems can track in addition to identify trends in addition to seasonalityManagers can use this to plan staffing levels in addition to cross-trainingIn as long as mation Systems as long as Supporting Strategy: Doing Things SmarterFirms have a competitive strategyIn as long as mation systems should be implemented that support that strategyLow-cost strategy implies in as long as mation systems to minimize expensesHigh-quality strategy implies in as long as mation systems to support ensuring excellent quality in addition to minimal defectsSources of Competitive Advantage

Identifying Where to Compete: Analyzing Competitive ForcesInfluence of the Internet on Competitive Forces (Table 2.3)Identifying How to Compete: Role of IS in the Value Chain

The Technology/Strategy FitThere are never enough resources to implement every possible IS improvementThere as long as e, organizations try to maximize business/IT alignmentThis means matching the IT investment to the company’s strategye.g., don’t invest in IS that maximizes product differentiation if your company’s strategic focus is on being a low-cost leaderCompanies that focus on the improvements in addition to business process management that help their value creation strategy the most will see the greatest competitive benefitAssessing Value as long as the IS InfrastructureEconomic ValueDirect financial impactArchitectural ValueExtending business capabilities today in addition to in the futureOperational ValueEnhancing ability to meet business requirementsRegulatory in addition to Compliance ValueComplying with regulatory requirementsBusiness Models in the Digital World

Business Models in the Digital WorldA business model reflects the following:What does a company doHow does a company uniquely do itIn what way (or ways) does the company get paid as long as doing itWhat are the key resources in addition to activities neededWhat are the costs involvedComponents in addition to E-business Revenue of a Business ModelComponents (Table 2.4)Customer segmentsValue propositionChannelsCustomer relationshipsRevenue streamsKey resourcesKey activitiesKey partnersCost structureRevenue Model (Table 2.5)Affiliate marketingSubscriptionLicensingTransaction fees in addition to BrokerageTraditional salesWeb advertisingFreeconomics: Free Products Are the FutureYahoo! makes millions from its free Web-based e-mail service— reduced storage cost increased revenue per user

The Freeconomics Value PropositionFree doesn’t mean no profitGoogle gives away searchUsers give Google search results their attentionThis can include attention to sponsored linksGoogle sells space as long as sponsored linksAdvertisers pay Google as long as that attention to sponsored linksSome users convert into customersCustomers pay advertising firms as long as their productsApplying Freeconomics to Various IndustriesInternational Business StrategiesThere are four international business strategiesHome replicationGlobalMultidomesticTransnationalEach has pros in addition to cons in terms of complexity, cost benefits, local responsiveness, in addition to control

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Home-Replication StrategyFocused domestically, homogenous marketsInternational business an extension of home businessFocus on core home market competenciesInability to react to local market conditionsDomestic systems, limited communication, local databasesGlobal Business StrategyCentral organization, st in addition to ardized offerings across markets, homogenous marketsSt in addition to ardized products, economies of scaleInability to react to local market conditionsCentralized systems, networks in addition to data sharing between home office in addition to subsidiariesMultidomestic Business StrategyDecentralized federation, heterogeneous marketsQuick reaction to changing local market conditionsDiffering products, lack of economies of scale, limited communication in addition to knowledge sharingDecentralized systems, bidirectional communications, local databases

Transnational Business StrategyBoth centralized in addition to decentralized components, integrated network in addition to marketBenefits of both multi-domestic in addition to global strategiesHighly complex, difficult to manageDistributed/shared systems, enterprise-wide linkages, common global data resourcesValuing InnovationsSome Enabling Technologies on the Horizon

Key Players: The Global EliteWho are the technology giants in the global marketplaceU.S.-based firms include: Hewlett-Packard, AT&T, Apple, IBM, Verizon, Microsoft, in addition to DellNon-U.S. firms include: Huawei Technologies, Nokia, Motorola, Siemens, Foxconn, in addition to ZTEIndustry Analysis: EducationCost of higher education in the United States has steadily increased (16% every five years)Average college graduate owes $30,000 in student loansTrend in globalization—increased collaboration in research in addition to curriculumTrend in online delivery—leads to cost savings, but may be less engaging to studentsMassively open online courses (MOOCs)—free to students

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Requirements Executive Board Tau Beta Pi

Miami Ad School-New York, NY has reference to this Academic Journal, Tau Beta Pi Integrity in addition to Excellence in Engineering TBP California Theta Chapter Est. 1952 Presenter: Nate Trimmer, TBP Alumni Advisor Who We Are Tau Beta Pi is the only engineering society representing the entire engineering profession. TBP was founded in 1885 so that recognize engineering students of distinguished scholarship in addition to exemplary character. There are now collegiate chapters at 234 US colleges in addition to universities, active alumnus chapters in 16 districts across the country, in addition to a total initiated membership of 500,907 as of Fall 2008. Distinguished TBP Alumni include: Nobel Prize winners John Bardeen & William B. Shockley: Inventors of the electronic transistor Dr. Wernher Von Braun: One of the world?s first Rocket Engineers Astronauts Buzz Aldrin in addition to Judith Resnick Lee Iacocca: Former president in addition to CEO of Chrysler Andrew Grove: Chairman in addition to former CEO of Intel Corp. Yahoo! co-founders Jerry Yang in addition to David Filo Larry E. Page: Co-Founder of Google TBP California Theta Chapter Est. 1952 Executive Board President: Brendan Kirkpatrick Vice-President: Gary Okada Treasurer: Lorena Montes Secretaries: Corresponding: Heather Lord Recording: Dusadee Corhiran AESB Representative: Christopher Bostwick Webmaster: David Thomas Faculty Advisor: Professor Jalal Torabzadeh TBP California Theta Chapter Est. 1952

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Membership Requirements Undergraduate students must be in the TOP 1/8th of their junior class or TOP 1/5th of their senior class. Each class consists of all of the engineering students in that class (CSULB G.P.A. above 3.0). Graduate students must be in the TOP 1/5th of their class or obtain a letter of recommendation from their primary academic advisor. Alumni must have graduated in the TOP 1/5th of their class. This applies even if their school did not have a chapter at the time they graduated. Practicing engineers must have achieved eminence in engineering as determined by the Tau Beta Pi, Inc. Headquarters. Candidates are usually recommended by members who know them. TBP California Theta Chapter Est. 1952 What We Do Engineering Futures: The Tau Beta Pi Engineering Futures Program was established so that provide interpersonal skills in consideration of engineering students. This is accomplished through the presentation of sessions on campus by alumnus Tau Bates who are trained in the materials. Sessions are offered in: People Skills Team Chartering Analytical Problem Solving Group Process Scholarships Chapter Projects: These include outreach projects in consideration of the community as well as on-campus events in consideration of the College of Engineering community. District Retreats: Each semester our designated district (16) holds a retreat whose purpose is so that promote inter-district communication in addition to networking between local Tau Beta Pi chapters. These organized retreats are funded by the national headquarters, in addition to any driving or lodging expenses are reimbursed. TBP California Theta Chapter Est. 1952 Requirements Activities in consideration of Sign-Off Sheet (tentative): Bent Polish (Individual in addition to Big Bent) Attend a minimum of TWO Tau Beta Pi meetings once committed Assist at TBP activities (e.g. ? Women Engineers at the Beach Day) Join one other CoE student organization (IEEE, SWE, AIAA.) Submit your Resume (tbpcaq@gmail , Subject: Resume08) BE INVOLVED!!! TBP California Theta Chapter Est. 1952

$$ Money $$ $80 one-time membership fee Individual bent Subscription so that TBP publication ?The Bent? Covers National initiation fee Chapter expenses Etc? Scholarships are available from National if you are unable so that cover cost of membership. Let us know! TBP California Theta Chapter Est. 1952 Thank You. Questions? TBP California Theta Chapter Est. 1952 Visit us in addition to find out more at TBP or csulb /org/college/tbp

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