Common Base Amplifier with 7- dB gain at 176 GHz in InP mesa DHBT Technology V.
Anders, Corrie, Contributing Writer has reference to this Academic Journal, PHwiki organized this Journal Common Base Amplifier with 7- dB gain at 176 GHz in InP mesa DHBT Technology V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, N. Parthasarathy, M. Seo, M. Urteaga, M. J. W. Rodwell , Department of Electrical in addition to Computer Engineering, University of Cali as long as nia, Santa Barbara, CA 93106 L. Samoska, A. Fung, Jet Propulsion Labs, Pasadena, CA 91109 Outline Motivation. Why Common-base Effect of layout parasitics on circuit stability in addition to MSG. InP mesa DHBT process. Circuit simulations. Device Results G-b in addition to Power amplifier results. W-b in addition to Power amplifier results. Motivation in addition to Previous Results Applications as long as electronics in 140-220 GHz frequency b in addition to Wideb in addition to communication systems Atmospheric sensing Automotive radar Small signal amplifier results 6.3 dB @ 175 GHz single stage amplifier in InP TSHBT technology, Miguel et.al., 12 dB @ 170 GHz three stage CE amplifier in InP TSHBT technology, Miguel et. al., 6-stage amplifier with 20 6 dB from 150-215 GHz, InP HEMT, Weinreb et. al. Power amplifier results 14-16 dBm @140-170 GHz with 10 dB gain in InP HEMT technology, Lorene et. al., 12.5 dBm @90 GHz with 8.6 dB gain in TS InP DHBT technology, Yun et. al., 14-16 dBm @65-145 GHz with > 10 dB gain in InP HEMT technology, Lorene et. al.,
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Why mesa -InP HBTs as long as 140- 220 GHz power amplifiers fmax > 400 GHz, ft > 250 GHz High current density > 3 mA/ m2. Vbr,ce0 > 6V Low thermal resistance. High power density, high gain in 140-220-GHz frequency range Why Common Base Common Base Circuit Schematic Common base has the highest MSG/MAG. Base inductance 0.8 m base contact width Leads to base access inductance. Lb ~ 3 pH as long as 0.8 mX12 m HBT. Longer finger length results in larger base access inductance
Collector emitter overlap Capacitance reduction Double-sided collector Contact Single-sided collector Contact Single-sided Collector contact reduces Collector to emitter overlap capacitance Cce, Lb degrade MSG/MAG Lb reduces MSG in 140-220-GHz frequency range. Single-sided collector Contact improves MSG 2-3-dB improvement in MSG.
Mesa IC Process: overview Both junctions defined by selective wet-etch chemistry Low contact resistances NiCr thin film resistors s = 40 / MIM capacitor, SiN dielectric. ADS momentum modeled CPW transmission lines Air bridges strap ground planes Single-stage Common Base power amplifier Circuit Schematic Objectives: 180 GHz amplifier, Psat~ 20 dBm Approach: InP mesa-DHBTs Simulations: ADS S-parameter, harmonic balance in addition to momentum simulations Output Large-signal Load-line match Device Model Load-line match Circuit optimized as long as output power not gain (Simulations)
Single-stage Common Base power amplifier 2 x 2 x 0.8 m x 12 m, AE=38 mm2 (Simulations) 5.3 dB at 180 GHz, 3-dB B in addition to width = 45 GHz, Saturated Pout, = 20 dBm Frequency of operation =180 GHz 3-dB b in addition to width = 45 GHz, Gain = 5.3 dB at 180 GHz, Pout,sat = 20 dBm. Two-stage Common Base amplifier Circuit Schematic Objectives: 180 GHz amplifier, Psat~ 20 dBm Approach: InP mesa-DHBTs Simulations: S-parameter in addition to harmonic in addition to momentum simulation in ADS Two-stage Common Base amplifier 6 x 0.8m x 12 m, AE=58 mm2 Frequency of operation =180 GHz 3-dB b in addition to width = 45 GHz, Gain = 8.7 dB, Pout,sat = 19.5 dBm. (Simulations) Power simulations at 180 GHz
Device Per as long as mance DC characteristics of a 2 X 0.8 m X 12 m Common-base InP HBT RF characteristics of a 1 X 0.8 m X 8 m HBT biased at Jc= 3 mA/m2, Vce =1.7 V Vbr = 7 V. ft = 240 GHz, fmax = 290 GHz. Relatively lower fmax larger base mesas relatively poorer base ohmics. Power measurement setup 170-180 GHz Power meter Frequency doubler W-b in addition to PA DUT Power measurement setup 150 GHz Gunn Oscillator Var Attn DUT Calorimeter
176 GHz single-stage Power amplifier 2 x 0.8m x 12 m, AE=20 mm2 7- dB gain at 176 GHz. 3-dB b in addition to width = 23 GHz. Pout = 8.7 dBm with 5 dB associated power gain at 172 GHz. Bias conditions Ic = 30 mA, Vcb= 1 V Power measurements at 172 GHz Bias conditions Ic = 40 mA, Vcb= 2 V 176 GHz single-stage Power amplifier At 172 GHz 7.53 mW output power with 5 dB associated gain. Maximum power measured = 8.37 mW at 176 GHz 176 GHz two-stage Power amplifier 4 x 0.8m x 12 m, AE=38 mm2 7- dB gain at 176 GHz. Pout = 8.1 dBm with 6.3 dB associated power gain at 176 GHz. Saturated Pout = 9.1 dBm Ist stage Ic = 25 mA, Vcb= 1 V IInd stage Ic = 30 mA, Vcb= 1 V Power measurements at 176 GHz Ist stage Ic = 40 mA, Vcb= 2 V IInd stage Ic = 51 mA, Vcb= 1.8 V
176 GHz two-stage Power amplifier At 150.2 GHz 10.3 dBm Pout with 3.4 dB associated gain. 84 GHz single-stage Power amplifier 4 x 0.8m x 12 m, AE=38 mm2 6.5- dB gain at 84 GHz. Pout = 32.4 mW with 4 dB associated power gain at 84 GHz. Bias conditions Ic = 37 mA, Vcb= 1 V Power measurements at 84 GHz Bias conditions Ic = 56 mA, Vcb= 2.2 V Design in addition to fabrication of W-b in addition to (75-110-GHz) G b in addition to (140-220-GHz) power amplifiers in InP mesa DHBT technology 7-dB at 176 GHz with a single-stage common-base amplifier. Obtained 8.77dBm output power with 5-dB associated power gain at 172 GHz. Obtained 32 mW at 84 GHz. Accomplishments This work was supported by the ONR , JPL , DARPA (USA).
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