Outline Introduction Simulation Model B in addition to Structure under Strain Acceptor Activation Energy
Cano, Theresa, Online Platform Manager and Pets Coordinator has reference to this Academic Journal, PHwiki organized this Journal Biaxial Strain-modified Acceptor Activation Energy of Wurtzite GaN Analyzed by kp Method Presented by: Ning Su John Simon Lili Ji Instructor: Dr. Debdeep Jena 12/13/2004 EE698D Advanced semiconductor physics Outline Introduction Background Motivation B in addition to structure calculation Conduction in addition to valence b in addition to Hamiltonian B in addition to structure modification by biaxial strain Acceptor activation energy in addition to conductivity Density of States (DOS) calculation Effective mass calculation Conclusion Introduction Role of strain on electronic in addition to optical properties of semiconductors has been carefully studied as long as several decades device applications: HBTs Lasers To better underst in addition to the effect of strain on semiconductor properties, fundamental studies of b in addition to structure is of great importance e.g. 1) tight-binding method 2) KP method– used in this work
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Introduction-contd Biaxial strain in Wurtzite Gallium Nitride (GaN) Large biaxial strain in bulk wurtzite GaN large lattice mismatch between GaN & substrate, post-cooling Less well understood compared to zinc-blend GaN Acceptor activation energy in GaN Large Ea of Mg-doped GaN (120~260meV) limits room temperature p-GaN conductivity Strained modified Ea, a potential way to improve electrical property Motivation of this work !! Simulation Model Hamiltonian derivation B in addition to Structure under strain DOS m tensor Fermi-Direc Hole distribution life time mobility Critical thickness conductance kP method B in addition to Structure under Strain Conduction in addition to valence b in addition to s Hamiltonian Conduction b in addition to ( parabolic b in addition to model) Valence b in addition to (ref. a) where in addition to ref. a: S. L. Chuang in addition to C. S. Chang, Phys. Rev. B, 54, 2491 (1996) B in addition to structure can be obtained by finding eigenvalues of the Hamiltonians defined above
B in addition to structure-contd Energy values as long as b in addition to edge as a function of strain ( -2%~2%) At the tensile strain of 0.107%, the LH b in addition to rises above the HH b in addition to edge B in addition to gap as long as compressive strain as long as tensile B in addition to structure-contd Valence b in addition to dispersions 1% compressive 1% tensile unstrained kx in addition to kz are transverse in addition to longitudinal axes along  direction Acceptor Activation Energy Assumption: Acceptor energy level is fixed with respect to vacuum level Typical value of EA =160 meV is chosen as long as Mg-doped GaN EA decreases faster with tensile strain
Effective Mass effective mass as a function of strain derived from b in addition to structure DOS in addition to Hole Distribution DOS Hole distribution Fermi-Dirac function Hole Concentration Hole concentration as a function a strain NA=1018cm-3
Mobility in addition to Conductivity Mobility in addition to conductivity along transverse in addition to longitudinal directions under strain (Assume life time =0.1ns ) Conductance Critical thickness is used as long as the layer thickness Conclusion Strain modified B in addition to structure was calculated using kp method Acceptor activation energy was found to decrease with strain Hole concentration increases rapidly with tensile strain µ & was enhanced in the  direction
Acknowledgement We acknowledge Prof. Debdeep Jena as long as his directions in addition to helpful discussions.
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